to-247 d 3 pak characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 11.5a) zero gate voltage drain current (v ds = 400v, v gs = 0v) zero gate voltage drain current (v ds = 320v v dss , v gs = 0v, t c =125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5635 rev a 5-2006 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 400 23 0.20 250 1000 100 24 apt4020b_svfr(g) 400 23 92 30 40 250 2 -55 to 150 300 23 30 960 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? faster switching ? avalanche energy rated ? lower leakage ? to-247 or surface mount d 3 pak ? fast recovery body diode caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com bvfr svfr fredfet power mos v ? g d s apt4020bvfr apt4020svfr APT4020BVFRG* apt4020svfrg* * g denotes rohs compliant, pb free terminal finish. 400v 23a 0.20 ? ? ? ? ?
dynamic characteristics apt4020b_svfr(g) 050-5635 rev a 5-2006 source-drain diode ratings and characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -23a) peak diode recovery dv / dt 5 reverse recovery time (i s = -23a, di / dt = 100a/s) reverse recovery charge (i s = -23a, di / dt = 100a/s) peak recovery current (i s = -23a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 200v i d = 23a @ 25c v gs = 15v v dd = 200v i d = 23a @ 25c r g = 1.6 ? min typ max 2650 400 180 120 16 60 10 11 38 7 unit pf nc ns min typ max 23 92 1.3 15 t j = 25c ? t j = 125c ? t j = 25c ? t j = 125c ? t j = 25c ? t j = 125c ? thermal characteristics symbol r jc r ja min typ max 0.50 40 unit c/w characteristic junction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 3.63mh, r g = 25 ? , peak i l = 23a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01
050-5635 rev a 5-2006 apt4020b_svfr(g) typical performance curves apt4020b_svfr(g) typical performance curves 0 40 80 120 160 200 0 2 4 6 8 10 02468 01020304050 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 50 40 30 20 10 0 1.4 1.3 1.2 1.1 1.0 0.9 1.15 1.10 1.05 1.00 0.95 0.90 1.2 1.1 1.0 0.9 0.8 0.7 0.6 50 40 30 20 10 0 50 40 30 20 10 0 25 20 15 10 5 0 2.5 2.0 1.5 1.0 0.5 0.0 v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c v gs =7v, 10v & 15v 5.5v 4.5v 5v 6v 5.5v 4.5v 5v v gs =15v 6v v gs =10v 6.5v 7v 6.5v v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized)
050-5635 rev a 5-2006 apt4020b_svfr(g) apt4020b_svfr(g) 1 5 10 50 100 400 .01 .1 1 10 50 0 50 100 150 200 250 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t c =+25c t j =+150c single pulse 100 50 10 5 1 .5 .1 20 16 12 8 4 0 i d = i d [cont.] 10,000 5,000 1,000 500 100 100 50 10 5 1 operation here limited by r ds (on) c rss c oss c iss v ds =200v v ds =320v v ds =80v t j =+150c t j =+25c 10s 1ms 10ms 100ms dc 100s v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 to - 247 (bvfr) package outline d 3 pak (svfr) package outline e1 sac: tin, silver, copper e3 100% sn
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